收藏本站
SQ3418EEV
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = 10 V
R DS(on) ( ? ) at V GS = 4.5 V
I D (A)
Configuration
TSOP-6
Top V iew
1
6
40
0.032
0.048
8
Single
(1, 2, 5, 6) D
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? Typical ESD Protection 800 V
? AEC-Q101 Qualified d
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
3 mm
2
5
(3) G
3
2.85 mm
Marking Code: 8Bxxx
4
(4) S
N-Channel MO S FET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TSOP-6
SQ3418EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
40
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C a
T C = 125 °C
I D
8
5
Continuous Source Current (Diode Conduction)
I S
6
A
Pulsed Drain
Current b
I DM
32
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I AS
E AS
P D
T J , T stg
5
1.2
5
1.6
- 55 to + 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount c
R thJA
R thJF
110
30
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2124-Rev. C, 07-Nov-11
1
Document Number: 65357
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SQ3427EEV-T1-GE3 MOSFET P-CH 60V 5.5A 6TSOP
SQ3456BEV-T1-GE3 MOSFET N-CH 30V 7.8A 6TSOP
SQ3460EV-T1-GE3 MOSFET N-CH 20V 8A 6TSOP
SQ4401DY-T1-GE3 MOSFET P-CH 40V 15.8A 8SOIC
SQ4410EY-T1-GE3 MOSFET N-CH D-S 30V 8SOIC
SQ4470EY-T1-GE3 MOSFET N-CH 60V 16A 8SOIC
SQ4840EY-T1-GE3 MOSFET N-CH D-S 40V 8SOIC
SQ4850EY-T1-GE3 MOSFET N-CH D-S 60V 8SOIC
相关代理商/技术参数
SQ3419EEV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 40 V (D-S) 175 °C MOSFET
SQ3419EEV-T1-GE3 功能描述:MOSFET 40V 7.4A 5W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ3426EEV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQ3426EEV-T1-GE3 功能描述:MOSFET 60V 7A 5W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ3427EEV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 60 V (D-S) 175 °C MOSFET
SQ3427EEV-T1-GE3 功能描述:MOSFET 60V 5.5A 5W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ3442EV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 20 V (D-S) 175 °C MOSFET
SQ3442EV-T1-GE3 功能描述:MOSFET 20V 4.3A 1.7W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube